Memory element for use in electronic system, has multiple memory cells and multiple external contact points for supplying electrical supply voltage to memory element

摘要

The memory element has multiple memory cells, multiple external contact points for supplying an electrical supply voltage (V-monitor) to the memory element and multiple voltage generators for generating internal voltage of the memory element. The memory element has an error register, which is formed for storing definite error identification, when the supply voltage applied on one of the external contact points during a test process in the memory element or an internal voltage of the memory element lies below a predetermined threshold value. An independent claim is also included for a method for testing the memory element.