发明名称 APPARATUS FOR MANUFACTURING SILICON OXIDE THIN FILM AND METHOD FOR FORMING THE SILICON OXIDE THIN FILM
摘要 <p>A semiconductor thin film element, which has high insulating characteristics equivalent to those of elements currently used as electronic devices and uses a silicon oxide thin film, is provided by performing a low-temperature printing process at a heatproof temperature of a substrate or below to a flexible plastic substrate and the like. A method for forming such semiconductor thin film element is also provided. A coat film composed of a silicon compound having a silazane structure or a siloxane structure is formed on the flexible plastic substrate, the coat film is converted into a silicon oxide thin film, and the semiconductor thin film element is formed by having the thin film as a part of an insulating layer or a sealing layer.</p>
申请公布号 WO2008078516(A1) 申请公布日期 2008.07.03
申请号 WO2007JP73400 申请日期 2007.12.04
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;KOZASA, KENJI;KAMATA, TOSHIHIDE 发明人 KOZASA, KENJI;KAMATA, TOSHIHIDE
分类号 H01L21/31;H01L21/336;H01L29/786 主分类号 H01L21/31
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