发明名称 |
APPARATUS FOR MANUFACTURING SILICON OXIDE THIN FILM AND METHOD FOR FORMING THE SILICON OXIDE THIN FILM |
摘要 |
<p>A semiconductor thin film element, which has high insulating characteristics equivalent to those of elements currently used as electronic devices and uses a silicon oxide thin film, is provided by performing a low-temperature printing process at a heatproof temperature of a substrate or below to a flexible plastic substrate and the like. A method for forming such semiconductor thin film element is also provided. A coat film composed of a silicon compound having a silazane structure or a siloxane structure is formed on the flexible plastic substrate, the coat film is converted into a silicon oxide thin film, and the semiconductor thin film element is formed by having the thin film as a part of an insulating layer or a sealing layer.</p> |
申请公布号 |
WO2008078516(A1) |
申请公布日期 |
2008.07.03 |
申请号 |
WO2007JP73400 |
申请日期 |
2007.12.04 |
申请人 |
NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY;KOZASA, KENJI;KAMATA, TOSHIHIDE |
发明人 |
KOZASA, KENJI;KAMATA, TOSHIHIDE |
分类号 |
H01L21/31;H01L21/336;H01L29/786 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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