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发明名称
Forming method of photoresist pattern improving etching resistance by RELACS material
摘要
申请公布号
KR100843888(B1)
申请公布日期
2008.07.03
申请号
KR20010079350
申请日期
2001.12.14
申请人
发明人
分类号
H01L21/027
主分类号
H01L21/027
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代理人
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