| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can sufficiently suppress the transfer of holes. SOLUTION: This semiconductor device (npn type bipolar transistor 100) is provided with: an n-type collector layer 2; a base layer comprising a p<SP>+</SP>diffusion layer 4, an SiGe layer 5, and a p-type silicon film 6; an n-type emitter layer 8; and a charge transfer prevention film 7 that is formed between the n-type collector layer 2 and the n-type emitter layer 8 and has an effect as a potential barrier to either electrons or holes. COPYRIGHT: (C)2008,JPO&INPIT |
