| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can improve an avalanche resistance. SOLUTION: In an element formation region M disposed at the center of the semiconductor device, a semiconductor element with an npn junction in a vertical direction Y is formed. In an end region E of the semiconductor device, an n<SP>+</SP>-type source layer is not formed and a transistor with an npn junction is not provided. A p-type column layer 3 formed so as to be connected to a p-type base layer 4 in the end region E has a volume V<SB>E</SB>larger than a volume V<SB>M</SB>of the p-type column layer 3 formed in the element formation region M. Net charge balance between p-n of the end region E is out of balance as compared with net charge balance between p-n of the element formation region M. COPYRIGHT: (C)2008,JPO&INPIT
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