| 摘要 |
PROBLEM TO BE SOLVED: To provide an organic memory device which uses an iridium organometallic compound achieving a short switching time, a low operating voltage, low manufacturing cost, high reliability, and nonvolatile characteristics, and a method of manufacturing the organic memory device which can simplify the manufacturing process and reduce the manufacturing cost. SOLUTION: An organic memory device 100 includes an organic active layer 20 containing an iridium organometallic compound and a conductive polymer between a first electrode 10 and a second electrode 30. By applying a voltage to the memory device 100, the resistance value of the organic active layer 20 exhibits bistability and memory characteristics are realized. COPYRIGHT: (C)2008,JPO&INPIT
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