发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, ELECTROOPTICAL DEVICE, AND ELECTRONIC APPARATUS |
摘要 |
PROBLEM TO BE SOLVED: To provide a bi-polar semiconductor device which is easy to manufacture and has an advantage in flexibility, to provide a manufacturing method thereof, and to provide an electrooptical device and an electronic apparatus equipped with the same. SOLUTION: This semiconductor device 1 has a substrate 8; an inorganic layer 2 provided with a source portion 3 and a drain portion 4 provided on one surface of the substrate 8 and working as a conductor, and a channel portion 5 integrally formed between the source portion 3 and the drain portion 4 and working as a semiconductor, and containing an inorganic material as a main material; an organic semiconductor layer 9 provided in contact with the inorganic layer 2, having a polarity different from the polarity of the channel portion 5 and containing an organic semiconductor material as a main material; a gate portion 7 provided not in contact with the inorganic layer 2 and giving an electric field to the channel portion 5; and a gate insulating layer 6 provided between the inorganic layer 2 and the gate portion 7 and insulating the source portion 3 and the drain portion 4 from the gate portion 7. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2008153550(A) |
申请公布日期 |
2008.07.03 |
申请号 |
JP20060341862 |
申请日期 |
2006.12.19 |
申请人 |
SEIKO EPSON CORP;SHINSHU UNIV |
发明人 |
KAMIKAWA TAKETOMI;NAKAMURA KIYOSHI;ICHIKAWA YU |
分类号 |
H01L29/786;H01L51/05;H01L51/30 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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