| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of occurrence of stress when an Si oxide film and Si on an Si substrate are bonded to each other, due to a difference in thermal expansion coefficient between Si and the Si oxide film. SOLUTION: When a diaphragm of a thin film PJ head is transferred based on direct bonding, a stress adjusting layer is arranged in order to prevent crack and breakage of the diaphragm on the membrane. COPYRIGHT: (C)2008,JPO&INPIT
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