发明名称 Memory having bit line with resistor(s) between memory cells
摘要 For one disclosed embodiment, an integrated circuit may comprise a memory array on the integrated circuit and access control circuitry on the integrated circuit. The memory array may have a bit line with one or more resistors along the bit line and may have a plurality of memory cells coupled to the bit line at a plurality of locations along the bit line. At least one resistor along the bit line may be between two locations at which memory cells are coupled to the bit line. The access control circuitry may be to select a memory cell coupled to the bit line and to sense a signal on the bit line from the selected memory cell. Other embodiments are also disclosed.
申请公布号 US2008158932(A1) 申请公布日期 2008.07.03
申请号 US20060648399 申请日期 2006.12.28
申请人 INTEL CORPORATION 发明人 KHELLAH MUHAMMAD M.;SOMASEKHAR DINESH;YE YIBIN;KIM NAM SUNG;DE VIVEK
分类号 G11C5/06 主分类号 G11C5/06
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