发明名称 |
Magnetic Random Access Memory Cells Having Split Subdigit Lines Having Cladding Layers Thereon and Methods of Fabricating the Same |
摘要 |
Magnetic RAM cells have split sub-digit lines surrounded by cladding layers and methods of fabricating the same are provided. The magnetic RAM cells include first and second sub-digit lines formed over a semiconductor substrate. Only a bottom surface and an outer sidewall of the first sub-digit line are covered with a first cladding layer pattern. In addition, only a bottom surface and an outer sidewall of the second sub-digit line are covered with a second cladding layer pattern. The outer sidewall of the first sub-digit line is located distal from the second sub-digit line and the outer sidewall of the second sub-digit line is located distal the first sub-digit line. Methods of fabricating the magnetic RAM cells are also provided.
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申请公布号 |
US2008160643(A1) |
申请公布日期 |
2008.07.03 |
申请号 |
US20080048082 |
申请日期 |
2008.03.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JAE-HYUN;KIM HYEONG-JUN;JEONG WON-CHEOL;JEONG CHANG-WOOK;JEONG HONG-SIK;JEONG GI-TAE |
分类号 |
H01L43/12;H01L21/00;H01L21/8246;H01L27/22;H01L29/82;H01L43/08 |
主分类号 |
H01L43/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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