| 摘要 |
A semiconductor device includes a first conduction type semiconductor substrate, a second conduction type base region in the substrate, a high concentration first conduction type source region in the base region, and first and second trenches. The source region is formed in an opposite side of the substrate. The first and second trenches pass through the source region and the base region, and the first and second trenches have different widths and shapes, respectively.
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