Method for production of image sensor, involves forming color filter layer on semiconductor substrate on which photodiode and transistor is provided

摘要

The method involves forming a color filter layer (11) on a semiconductor substrate on which a photodiode and transistor is provided. A planarization layer (12) is formed on the color filter layer and a low temperature oxide coating (13) is formed on the planarization layer. A photoresist pattern (14) is formed on the low temperature oxide coating to accomplish a reflow process. A micro lens arrangement is formed to accomplish a process of the reactive ion corroding on the photoresist pattern and the low temperature oxide coating.