METHOD FOR MANUFACTURING MINUTE PATTEN

摘要

A fine pattern forming method is provided to normally form the fine pattern of a net die adjacent to the boundary of a non-exposure region of a wafer edge when forming the net die on the wafer. A photosensitive layer is formed on a semiconductor substrate including a first region and a second region. A fine pattern is normally formed in the first region of a net die region. A first exposure process using a reticle or a mask having image information is performed in the first and second regions with first exposure energy. A second exposure process using the reticle or the mask having the opened second region is performed with second exposure energy lower than the first exposure energy.