MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to prevent a gate leaning phenomenon by reducing the thermal stress of laminated layers and minimizing the out gassing of a barrier metal. A gate dielectric and a gate including a polysilicon layer(202) where boron is doped are formed on a semiconductor substrate. A gate spacer is formed on the gate. When the gate spacer is formed, an oxide layer is formed on the gate. The oxide layer is nitridized to form a nitride oxide layer(224). The oxide layer is formed through an HARP(High Aspect Ratio Process : O3-TEOS) process. The HARP process is performed under a temperature of 450 to 500 °C. A thickness of the oxide layer is 50 to 100 Å. The nitride oxide layer is formed through a plasma process. The plasma process is performed under a temperature of 450 to 500 °C. The gate is configured with a structure of which the polysilicon layer, a barrier layer(214), a metal layer(216), and a hard mask layer are laminated.