| 摘要 |
A dry etching apparatus is provided to replace one of buffer plates only and to reduce a maintenance cost by forming a buffer plate structure with first and second buffer plates. An upper electrode(130) is formed in a process chamber(110). A lower electrode(120) is comprised of a chuck body(123) and a chuck base(121). The chuck body faces the upper electrode and receives a substrate. The chuck base is formed on a lower portion of the chuck body. A first buffer plate(143a) surrounds an upper end of a side of the lower electrode. The first buffer plate is coupled to the side of the lower electrode. A second buffer plate(143b) surrounds a lower end of a side of the lower electrode. The second buffer plate is formed on the lower portion of the first buffer plate. A plate(140) made of ceramic is formed to surround the outsides of the first and second buffer plates. The ceramic plate is coupled to the first buffer plate. The second buffer plate is coupled to the first buffer plate by a coupling unit.
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