发明名称 ELECTRO STATIC DISCHARGE PROTECT CIRCUIT
摘要 An electro-static discharge protection circuit is provided to lower an operation voltage of the electro-static discharge protection circuit and to be rapidly turned on by forming a trigger unit. A main discharge unit(20) discharges static electricity flowed from a pad(P2) to a first power line or a second power line. A power clamp unit(24) discharges the static electricity discharged to the first power line or the second power line. A trigger unit(26) is connected between one of the first and second power lines and the pad to detect a detection voltage by the static electricity and to drive the main discharge unit and the power clamp unit. The main discharge unit has a PMOS transistor(P20) and NMOS transistors(N20,N24). The PMOS transistor is connected between the first power line and the pad. A gate and a drain of the PMOS transistor are connected to each other. The NMOS transistors are connected between the second power line and the pad. A gate of the NMOS transistor receives the detection voltage.
申请公布号 KR20080062530(A) 申请公布日期 2008.07.03
申请号 KR20060138464 申请日期 2006.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YUN, SUK;MOON, JUNG EON
分类号 H01L27/04 主分类号 H01L27/04
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