| 摘要 |
A method for forming a semiconductor device is provided to increase etch processing margin and gap-fill margin by forming an isolation layer using two-step isolation processes. A trench is formed in a semiconductor substrate(100) to define a bar-type active region(120). A first isolation layer(130) is formed by filling a silicon oxide layer in the trench. A silicon growing layer(140) is formed on the active region by performing an SEG(Selective Epitaxial Growth) process. A second isolation layer(135) is formed by filling an HDP(High Density Plasma) oxide layer between the silicon growing layers. Then, a gate is formed on the resultant structure.
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