| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to decrease a stress among an interlayer dielectric, a metal line and a plug by performing a sintering after changing a metal structure in a CMOS image sensor structure. An interlayer dielectric(110) is formed on a substrate on which a photodiode is formed. A metal line layer(130) is formed on the interlayer dielectric. An upper part insulating layer is formed on the metal line layer. Wherein, the metal line comprises a lower part barrier layer(131,133), a metal line above the lower part barrier layer and an upper part barrier layer(137,139) above the metal line.
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