| 摘要 |
A method for forming a salicide blocking layer of a semiconductor device is provided to prevent increase of surface resistance and contact resistance of a salicide area by forming the salicide blocking layer through an initial dry etching and final wet etching. A first layer, which is to be used as a lower layer of a salicide blocking layer(20'), is deposited on the entire surface of a semiconductor substrate. A second layer, which is to be used as an upper layer of the salicide blocking layer(21'), is deposited on the first layer. A photoresist pattern(22) is formed at a region where the salicide blocking layer will be formed. The second layer of the photoresist pattern region remains by performing a dry etching by using the photoresist pattern as a mask, and an excluded region thereof is removed, so that the remaining second layer can be formed as the upper layer salicide blocking layer. The first layer of the photoresist pattern region remains by performing a wet etching, and the excluded region thereof is removed, so that the remaining first layer can be formed as the lower layer salicide blocking layer.
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