| 摘要 |
A method for forming a contact plug of a semiconductor substrate is provided to minimize a layer stress caused by a nitride layer by forming a high dielectric layer for forming an etch stop layer after a thin nitride layer is formed. A plurality of select lines and a plurality of wordlines are formed on a semiconductor substrate(102). A first etch stop layer is formed on the select line and the wordline. A second etch stop layer having different etch selectivity from that of the first etch stop layer is formed on the first etch stop layer. A first insulation layer is formed on the second etch stop layer. The first insulation layer between the select lines is removed. The second etch stop layer between the select lines is removed. The first etch stop layer between the select lines is eliminated to form a contact hole to which a part of the semiconductor substrate is exposed. A conductive material is formed in the contact hole to form a contact plug(124). The first etch stop layer can be made of a nitride layer. The second etch stop layer can be made of a high dielectric layer.
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