发明名称 SEMICONDUCTOR APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide technique capable of improving the reliability of a semiconductor apparatus. <P>SOLUTION: The semiconductor apparatus has a semiconductor device which has a metal electrode 12 on at least one main surface, and a die pad (metal member) 13 electrically connected to the metal electrode 12 through conductive resin 7 obtained by mixing Ag particles (metal particles) 9 containing noble metal with base resin (organic resin) 10, wherein a porous nanoparticle coat film (nobel metal layer) 5 having nanoparticles of Ag (nobel metal) sintered on a metal surface is formed on at least one of mutually opposite surfaces of the metal electrode 12 and die pad 13. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008153470(A) 申请公布日期 2008.07.03
申请号 JP20060340473 申请日期 2006.12.18
申请人 RENESAS TECHNOLOGY CORP 发明人 KAJIWARA RYOICHI;ITO KAZUTOSHI
分类号 H01L21/52;B22F3/11;B22F7/04;H01L21/60 主分类号 H01L21/52
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