| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, along with its manufacturing method, capable of suppressing occurrence of defective conduction or defective insulation, being excellent in mass productivity, and capable of reducing the damage on an integrated circuit due to lower process temperature. SOLUTION: The semiconductor device includes a semiconductor substrate equipped with an electrode wiring, a hole provided with one opening formed in the thickness direction of the semiconductor substrate, and an electrode part formed in the hole. The electrode part is formed in such manner as its one end is jointed to the bottom part provided on the side opposite to the opening to be conductive to the electrode wiring, with an interval from the hole. The manufacturing method of the semiconductor method includes a first process in which a hole is formed in the thickness direction of the semiconductor substrate, a second process in which the electrode part is formed by jointing one end to the bottom part provided on the side opposite to the opening and depositing conductive material from the bottom part toward the opening, and a third process in which the interval is formed between the electrode part and the hole by etching. COPYRIGHT: (C)2008,JPO&INPIT
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