发明名称 COMPOSITION FOR CLEANING SUBSTRATES AND METHOD OF FORMING GATE USING THE COMPOSITION
摘要 Provided are a substrate cleaning composition including a fluoride compound, an inorganic acid, and deionized water, and a method of forming a gate using the same. The fluoride compound is one of HF, NH<SUB>4</SUB>F, and a combination thereof, and the inorganic acid is one of HNO<SUB>3</SUB>, HCl, HCIO<SUB>4</SUB>, H<SUB>2</SUB>SO<SUB>4</SUB>, or H<SUB>5</SUB>IO<SUB>6</SUB>. The substrate cleaning composition removes polymer by-products generated by etching a metal layer for forming a gate, but not other layers.
申请公布号 US2008160743(A1) 申请公布日期 2008.07.03
申请号 US20070941178 申请日期 2007.11.16
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE HYO-SAN;KIM SANG-YONG;HONG CHANG-KI;SHIM WOO-GWAN;HAN JEONG-NAM
分类号 H01L21/283 主分类号 H01L21/283
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