| 摘要 |
A method of fabricating a semiconductor device includes a step of preparing a semiconductor substrate in which an edge region and a cell formation region are defined. Next, an insulating layer is deposited on an entire surface of the semiconductor substrate. The insulating layer deposited on the edge region of the semiconductor substrate is then selectively etched within a chamber of plasma etch equipment equipped with a lower support member, on which the semiconductor substrate can be mounted, and an upper insulating member opposite to the semiconductor substrate. Finally, an annealing process is performed on the insulating layer of the semiconductor substrate.
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