发明名称 |
SYSTEMS FOR PROGRAMMING NON-VOLATILE MEMORY WITH REDUCED PROGRAM DISTURB BY USING DIFFERENT PRE-CHARGE ENABLE VOLTAGES |
摘要 |
Unselected groups of non-volatile storage elements are boosted during programming to reduce or eliminate program disturb for targeted, but unselected memory cells connected to a selected word line. Prior to applying a program voltage to the selected word line and boosting the unselected groups, the unselected groups are pre-charged to further reduce or eliminate program disturb by providing a larger boosted potential for the unselected groups. During pre-charging, one or more pre-charge enable signals are provided at different voltages for particular non-volatile storage elements.
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申请公布号 |
US2008158991(A1) |
申请公布日期 |
2008.07.03 |
申请号 |
US20060618606 |
申请日期 |
2006.12.29 |
申请人 |
HEMINK GERRIT JAN;DONG YINGDA;LUTZE JEFFREY W;LEE DANA |
发明人 |
HEMINK GERRIT JAN;DONG YINGDA;LUTZE JEFFREY W.;LEE DANA |
分类号 |
G11C7/00;G11C7/06;G11C16/06 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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