| 摘要 |
<p>A DMOS device and a manufacturing method thereof are provided to reduce the number of diffusion processes by forming simultaneously a drift diffusion region of a diffusion transistor region and a well region of a low voltage transistor region. A DMOS device includes high voltage transistor regions(MVN,MVP,HVN,HVP) and low voltage transistor regions(LVN,LVP). A drift diffusion region(56) is formed in the high voltage transistor regions. A well region is formed in the low voltage transistor regions. The depth of the drift diffusion region is equal to the depth of the well region. A high voltage well region is formed in the high voltage transistor regions. The drift diffusion region is formed in the high voltage well region.</p> |
