| 摘要 |
<p>A semiconductor device, a non-volatile semiconductor memory device, and a manufacturing method thereof are provided to improve the charge holding property by using a silicon nitride layer as a barrier insulating layer. A semiconductor device comprises an MOS type transistor formed on a semiconductor substrate, and a coated insulating layer covering a surface part of the transistor. The insulating layer is formed of a silicon nitride layer or a silicon oxynitride layer. The proportion of density in N-H combination inside the insulating layer and Si-H combination is below 3. The density of the N-H combination inside the insulating layer is below 4 x10^21/cm^3. The proportion of density in the N-H combination inside the insulating layer and the Si-H combination is below 2. The insulating layer is formed by CVD(Chemical Vapor Deposition) using HCD(HexaChlorodisilane) as source gas.</p> |
