CMOS IMAGE SENSOR AND METHOD OF MANUFATURING THEREOF

摘要

A CMOS image sensor and a manufacturing method thereof are provided to prevent a punch-through effect between a photodiode and a floating diffusion region by forming a punch-though prevention layer at an upper side of the floating diffusion region. An epitaxial layer(200) is formed on a semiconductor substrate. A photodiode region is formed in the epitaxial layer. A color filter(221) is formed at an upper side of the photodiode region. A floating diffusion region(240) is separated from the photodiode region. A punch-through prevention layer(250) is formed at an upper side of the floating diffusion region. A transfer transistor(230) is formed in the epitaxial layer between the photodiode region and the floating diffusion region. The punch-through prevention layer includes Ge or As and has a thickness of 120-139 Å.