摘要 |
A flash memory device and an operation method thereof are provided to prevent a junction leakage current flowing in a plane not operating in the memory device. A flash memory device includes more than one plane including a number of blocks(320), an X decoder(330) to select the blocks and a page buffer(310). The X decoder includes a first circuit outputting a first signal according to a plane selection signal and a second circuit maintaining a common source line of the plane as a power supply voltage level or a ground voltage level in response to the first signal. The first circuit is a NAND gate receiving a plane selection signal and a control signal as input signals.
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