发明名称 APPARATUS OF FLASH MEMORY AND METHOD OF OPERATING THE SAME
摘要 A flash memory device and an operation method thereof are provided to prevent a junction leakage current flowing in a plane not operating in the memory device. A flash memory device includes more than one plane including a number of blocks(320), an X decoder(330) to select the blocks and a page buffer(310). The X decoder includes a first circuit outputting a first signal according to a plane selection signal and a second circuit maintaining a common source line of the plane as a power supply voltage level or a ground voltage level in response to the first signal. The first circuit is a NAND gate receiving a plane selection signal and a control signal as input signals.
申请公布号 KR20080061523(A) 申请公布日期 2008.07.03
申请号 KR20060136362 申请日期 2006.12.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 YUN, IN SUK
分类号 G11C16/30;G11C16/06 主分类号 G11C16/30
代理机构 代理人
主权项
地址