| 摘要 |
A method for fabricating a semiconductor device is provided to avoid deterioration of contact resistance by preventing contact spiking even if misalignment occurs in forming a contact hole. A recessed isolation layer(33) is formed on an isolation region of a semiconductor substrate(31) by an STI(shallow trench isolation) method to expose the lateral surface of the upper portion of a trench(32). A gate(37) is formed on an active region of the semiconductor substrate by interposing a gate insulation layer(35). First and second spacers(39,40) are formed on the lateral surface of the gate and the exposed lateral surface of the trench. Impurities of a different conductivity type than that of the semiconductor substrate are doped into the active region of the semiconductor substrate to form an impurity region(41). An interlayer dielectric is formed on the semiconductor substrate, and the impurity region is exposed to form a contact hole. The first and second spacers can be made of a material having different etch selectivity from that of the isolation layer.
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