| 摘要 |
A CMOS image sensor and a manufacturing method thereof are provided to prevent an image signaling effect due to a leakage current by applying a voltage to an electrode in an isolation layer. An epitaxial layer(4) is formed on a semiconductor substrate(2) to define a photodiode region(PD), an active region, and an isolation region. A gate insulating layer(8) is formed in the epitaxial layer. A gate electrode(10) having spacers(12) is formed on the gate insulating layer. An isolation layer(6) is formed in the isolation region of the epitaxial layer by performing an STI process. A photoresist pattern is formed to open a center part of the isolation layer. A contact hole is formed in the isolation layer by using a RIE method. An electrode(30) is formed by filling the contact hole with an electrical conductive metal or a polysilicon layer. An interlayer dielectric is formed on the isolation layer and the gate electrode. A contact is formed on the interlayer dielectric.
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