发明名称 INFORMATION STORAGE DEVICE USING MAGNETIC DOMAIN WALL MOVING AND METHOD OF MANUFACTURING THE SAME
摘要 An information storage device using magnetic domain wall movement and a method of manufacturing the same are provided to obtain an information storage device with a large capacity easily by forming four areas connected with a magnetic layer for connection and to increase mobility and reliability by not including a moving mechanism. An information storage device using magnetic domain wall movement comprises a write magnetic layer(100), a connection magnetic layer(200), information storing magnetic layers(300), and a read unit. The write magnetic layer has magnetic domain walls. The connection magnetic layer is formed on the write magnetic layer. The information storing magnetic layers are formed on side and upper ends of the connection magnetic layer. The read unit reads information stored in the information storing magnetic layer. The information storing magnetic layers are formed on first and second upper ends of the connection magnetic layer. The information storing magnetic layer includes a first area(230) covering side upper ends of the connection magnetic layer and a second area(260) vertical to the first area.
申请公布号 KR20080062767(A) 申请公布日期 2008.07.03
申请号 KR20060138862 申请日期 2006.12.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM, CHEE KHENG
分类号 G11B5/02;G11B5/00;G11B9/00 主分类号 G11B5/02
代理机构 代理人
主权项
地址