| 摘要 |
PROBLEM TO BE SOLVED: To suppress deformation of an interlayer insulating film due to temperature rise in a hollow structure. SOLUTION: This semiconductor device includes first and second wiring layers L4, L5 each having a hollow structure and stacked vertically so as to be adjacent to each other on a semiconductor substrate S, a dummy pattern P formed in the first wiring structure L4 and not working as a signal line, and a conductive pattern P formed in the second wiring layer L5. Viewed from above the semiconductor substrate S, the dummy pattern P and the conductive pattern P each have a portion overlapping over each other and the other portion. COPYRIGHT: (C)2008,JPO&INPIT |
