| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory which can suppress variations in characteristics and can reduce an S-factor by using a polysilicon SOI (silicon on insulator). SOLUTION: The memory comprises: a substrate 1; a first insulating film 3 formed on the substrate 1; semiconductor films 5, 5' made of polysilicon and formed on the insulating film 3; a tunnel film 9 formed on the semiconductor films 5, 5'; floating gate 11 formed on the tunnel film 9; a second insulating film 13 formed on the floating gate 11; a control gate 15 formed on the second insulating film 13; and a conductor region 7 made of metal silicide, passed through the semiconductor films 5, 5' and formed on the first insulating film 3 to be opposed thereto and to sandwich the semiconductor films 5, 5' under the floating gate 11. COPYRIGHT: (C)2008,JPO&INPIT
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