发明名称 Semocondutor device having multiple-layer hard mask with opposite stresses and method for fabricating the same
摘要 A semiconductor device includes a hard mask including a first layer and a second layer in contact with each other and having opposite stress types, wherein a difference between initial stresses of the first layer and the second layer is increased so that after a thermal process, the difference between the final stresses of the first and second layer becomes smaller, to reduce the likelihood of peeling of the first or second layer. The initial stress of the first layer includes a compressive stress and the initial stress of the second layer includes a tensile stress.
申请公布号 US2008157403(A1) 申请公布日期 2008.07.03
申请号 US20070823772 申请日期 2007.06.28
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE JUNG-SEOCK;NAM KI-WON
分类号 H01L21/475;H01L23/28 主分类号 H01L21/475
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