| 摘要 |
An image sensor and a method for manufacturing the same are provided. The image sensor includes a photodiode region, an insulation layer structure, a light leakage preventing unit, color filters, and microlenses. The photodiode region in a pixel area of a semiconductor substrate generates an electric signal corresponding to entered light. The photodiode region includes a first photodiode, a second photodiode, and a third photodiode. The insulation layer structure includes trenches corresponding to boundaries between the first to third photodiodes. The light leakage preventing unit is formed in the trenches between the photodiodes and prevents light from passing through the trenches. The color filters are formed on the insulation layer structure corresponding to the first to third photodiodes, and the microlenses are disposed on the color filter corresponding to each of the color filters.
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