| 摘要 |
A CMOS image sensor and method the same are disclosed. The method comprises forming an insulating interlayer including a plurality of photodiodes on a semiconductor substrate, forming a plurality of metal lines within the insulating interlayer, sequentially forming an oxide layer and a passivation layer on the insulating interlayer, forming a TEOS layer on the passivation layer, forming a planarization layer on a portion of the TEOS layer, and forming a microlens on the planarization layer.
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