Development of a low driving-voltage micro scratch drive actuator by ultra-low resistivity silicon wafer

摘要

Based on the voltage-division theory, this invention proposes a new method to decrease the driving voltage of the micro scratch drive actuator (SDA) by using an ultra-low resistivity silicon wafer as substrate. This patent has compared two SDA actuators with the same layout and fabricating processes but under different resistivity of substrate. The SDA fabricated on the ultra-low resistivity silicon wafer has demonstrated a lower driving voltage of only about 4~12 V_o-p. However, the conventional SDA using normal silicon wafer needs higher driving voltage (30~75 V_o-p), thus has lower probability for commercial applications. On the other hand, this invention presents a new SDA process to overcome the inherent 2 mum line-width limitation of conventional mask aligner with 4360 Å UV wavelength light source (g-line) and further to reduce the driving voltage of SDA.