Dopant confinement in the delta doped layer using a dopant segregation barrier in quantum well structures

摘要

A device grade III-V quantum well structure and method of manufacture is described. Embodiments of the present invention enable III-V InSb quantum well device layers with defect densities below 1x10⁸ cm^-2 to be formed. In an embodiment of the present invention, a delta doped layer is disposed on a dopant segregation barrier in order to confine delta dopant within the delta doped layer and suppress delta dopant surface segregation.