| 摘要 |
The present invention provides a semiconductor device package with a metal marking structure comprising a substrate with a die receiving cavity formed within an upper surface of the substrate and a through hole structure formed there through, wherein a terminal pad is formed under a lower surface of the substrate and a conductive trace formed on the lower surface of the substrate; a die attached within the die receiving cavity and having a plurality of bonding pads formed thereon; a first dielectric layer formed on the die and the substrate to expose the surface of the bonding pads and the through hole structure; a redistribution layer formed on the first dielectric layer to couple the bonding pads and the through hole structure; a second dielectric layer formed on the first dielectric layer and the redistribution layer trace; a metal marking layer formed on the second dielectric layer; and a heat sink layer formed on the metal marking layer. |
