发明名称 |
NAND FLASH MEMORY PROGRAMMING WITH FLOATING SUBSTRATE |
摘要 |
A method of charging a floating gate in a nonvolatile memory cell comprises bringing a substrate channel within the memory cell to a first voltage, bringing a control gate to a programming voltage, and floating the substrate channel voltage while the control gate is at the programming voltage. Memory devices include state machines or controllers operable to perform the described method, and operation of such a state machine, memory device, and information handling system are described. |
申请公布号 |
WO2008027409(A3) |
申请公布日期 |
2008.07.03 |
申请号 |
WO2007US18960 |
申请日期 |
2007.08.28 |
申请人 |
MICRON TECHNOLOGY, INC.;GHODSI, RAMIN;TANG, QIANG |
发明人 |
GHODSI, RAMIN;TANG, QIANG |
分类号 |
G11C16/12 |
主分类号 |
G11C16/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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