| 摘要 |
A nitride semiconductor laser device is provided to suppress cracks of a nitride semiconductor and a protective layer by alleviating stress at boundaries between a first and a second layer. A nitride semiconductor laser device includes a nitride semiconductor layer, which includes a first nitride semiconductor layer(12), an activation layer(13), and a second nitride semiconductor layer(14), and a protective layer which is formed on a surface of a resonator of the nitride semiconductor layer. The protective layer includes sequentially a first layer(21a), which has a crystal structure of the same axis alignment as crystal structure of the nitride semiconductor layer, and a second layer(21b), which has a crystal structure of a different axis alignment from the first layer, on at least one surface of the resonator. |
