MEMORY CIRCUIT, SEMICONDUCTOR DEVICE, INFORMATION PROCESSING DEVICE, AND DATA WRITE-IN METHOD

摘要

Provided is a memory circuit capable of improving reliability without lowering performance in a portion of a resister file (memory circuit) used in an information processing device where reliability and performance are indispensable. The memory circuit includes: a read-out memory which inputs write-in data and outputs read-out data; a plurality of write-in memories which input write-in data, store write-in data, and perform self-holding; a majority decision circuit which inputs a plurality of write-in data held in a plurality of write-in memories and outputs one majority decision data; and a write-in control circuit which inputs overwrite data, write-in enable, and majority decision data and outputs the overwrite data or the majority decision data as write-in data to a read-out memory and a plurality of write-in memories according to a write-in enable value.