发明名称 PHOTOMASK FOR DEPRESSING HAZE AND METHOD OF FABRICATING THE SAME
摘要 A photo mask for preventing haze and a method for manufacturing the same are provided to restrain the generation source of the haze when a cleaning solution containing sulfuric acid or ammonia is used in a cleaning process by using an ion reaction preventing layer. An optical blocking layer pattern(330) is arranged on a transparent substrate(310). The optical blocking layer pattern is made of a Cr layer. A region on which the optical blocking layer pattern is arranged is an optical blocking layer. An exposed region of a surface of the transparent substrate is an optical transmit region. An ion reaction preventing layer(340) is arranged over the exposed surface of the transparent substrate and the optical blocking layer pattern. The ion reaction preventing layer is made of a silicon oxide layer or a silicon nitride layer. The ion reaction preventing layer has a thickness of several to tens Å. The ion reaction preventing layer restrains the outgassing of ions remaining on a surface of a photo mask toward the outside.
申请公布号 KR20080062751(A) 申请公布日期 2008.07.03
申请号 KR20060138840 申请日期 2006.12.29
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, YONG DAE
分类号 H01L21/027 主分类号 H01L21/027
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