| 摘要 |
<p>A method for manufacturing a photo mask is provided to realize high integration of a semiconductor device by forming a mask pattern or an assist pattern having an improved fine line width. A mask pattern(104) and an assist pattern(106) having a first line width are formed on a mask substrate(102). A photoresist pattern(108) for opening a part of the assist pattern is formed on the mask pattern. The assist pattern in an opening region is etched and removed by using the photoresist pattern as a mask. The assist pattern has a second line width smaller than the first line width. A photo mask(100) is manufactured by removing the photoresist pattern remaining on the mask substrate. A mask pattern and the assist pattern are realized on the mask substrate of the photo mask. The assist pattern has a line width smaller than a limit resolution of an electron exposure apparatus.</p> |
