METHOD OF MANUFACTURING VERTICAL-TYPE CMOS IMAGE SENSOR

摘要

A vertical type CMOS image sensor and a manufacturing method thereof are provided to improve a leakage current by forming a trivalent heavy ion layer on an edge of an STI(Shallow Trench Isolation). A trench is formed on an upper surface of a semiconductor substrate(100). A photoresist pattern is formed on the semiconductor substrate to open the trench region. A trivalent heavy ion layer(110) is formed at a lower part of the trench. The trench is filled with an oxide. An STI(120) is formed by planarizing the oxide. A gate pattern including a gate oxide layer pattern and a gate poly pattern is formed at one region of the semiconductor substrate separated from the STI. A photoresist pattern(130) is formed on the semiconductor substrate to open a blue photodiode region between the gate pattern and the STI. A blue photodiode is formed by implanting dopants for blue photodiode.