| 摘要 |
A flash memory device comprising a monitoring cell, and a program and erase method thereof are provided to prevent over-program or erase failure by controlling a program or erase voltage during usage after the product is sold to a consumer. A flash memory device comprises a memory cell region(110) and a spare cell region(120). Cell strings comprising a drain selection transistor, a source selection transistor and a number of memory cells are arranged in the memory cell region. A monitoring cell string(121) is arranged in the spare cell region. The monitoring cell string has the same structure as the memory cell string. According to a program method of the flash memory device, a program voltage to program the memory cell is detected by using the monitoring cell string. The memory cell is programmed by using the detected program voltage as a start voltage.
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