METHOD FOR DETERMINING DISTANCE OF HEAT SHIELD AND MANUFACTURING APPARATUS OF SILICON SINGLE CRYSTAL INGOT USING THE SAME

摘要

A method of determining the distance of a heat shield and an apparatus of manufacturing a silicon single crystal ingot using the same are provided to improve a yield by adjusting a distance between the heat shield and the silicon single crystal ingot. A furnace(20) is installed in a chamber(10), and is filled with a silicon solution(SM). The furnace is heated by a heater(40). A heat shield(50) is interposed between silicon single crystal ingot and the furnace to shield the heat emitted from the heater and the silicon solution. A horizontal distance between the heat shield and the silicon single crystal ingot is determined under a condition in that a vertical temperature gradient between an interface of the silicon solution and the silicon single crystal ingot is maximized.