发明名称 |
ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT PROTECTING THIN GATE INSULATION LAYERS IN A SEMICONDUCTOR DEVICE |
摘要 |
An electrostatic discharge protection circuit protects the internal circuits of a semiconductor. The electrostatic discharge protection circuit includes a first electrostatic protection unit connected to a power source supply pad. The first electrostatic protection unit discharges an ESD current into the power source supply pad when an ESD is introduced into the input/output pad, and generates a first driving voltage by utilizing the ESD current flow through a voltage-drop unit. A driver driven by the first driving voltage generates a second driving voltage by an ESD current. A second electrostatic protection unit discharges the introduced ESD current into the power source supply pad by the second driving voltage such that a voltage applied to a gate of the first NMOS transistor is reduced.
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申请公布号 |
US2008158749(A1) |
申请公布日期 |
2008.07.03 |
申请号 |
US20080045967 |
申请日期 |
2008.03.11 |
申请人 |
KWAK KOOK WHEE;CHOI NAK HEON |
发明人 |
KWAK KOOK WHEE;CHOI NAK HEON |
分类号 |
H02H9/04 |
主分类号 |
H02H9/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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