Method of forming phase change layer, method of manufacturing a storage node using the same, and method of manufacturing phase change memory device using the same

摘要

Provided are a method of forming a phase change layer, a method of manufacturing a storage node using the method of forming a phase change layer, and a method of manufacturing a phase change memory device using the method of manufacturing a storage node. The method of forming a phase change layer may use an electrochemical deposition (ECD) method. The method of forming the phase change layer may include forming an electrolyte by mixing a solvent and precursors, each precursor containing an element of the phase change layer, dipping an anode plate and a cathode plate in the electrolyte to be spaced apart from each other, wherein the cathode plate may be a substrate on which the phase change layer is to be deposited, setting deposition conditions of the phase change layer; and supplying a voltage between the anode plate and the cathode plate.